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| (R) STPS2045CT/CF/CG/CFP/CR POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 10 A VRRM Tj (max) VF (max) 45 V 175 C 0.57 V A1 K A2 A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED s s s s s TO-220AB STPS2045CT K A1 A2 K A2 A1 ISOWATT220AB STPS2045CF D2PAK STPS2045CG A2 K A1 DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AB, IPAK, ISOWATT220AB, TO-220FPAB or D2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 TO-220AB / D2PAK / IPAK ISOWATT220AB TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Parameter Repetitive peak reverse voltage A2 K A1 TO-220FPAB STPS2045CFP IPAK STPS2045CR Value 45 30 Tc = 155C Tc = 125C Per diode Per device 10 20 180 1 2 4000 -65 to +175 175 10000 Unit V A A tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 ms square tp = 1s Tj = 25C A A A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/8 July 2003 - Ed: 4F STPS2045CT/CF/CG/CFP/CR THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D2PAK IPAK ISOWATT220AB TO-220FPAB Rth (c) TO-220AB / D2PAK IPAK ISOWATT220AB TO-220FPAB When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25C Tj = 125C VF * Forward voltage drop Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Value Per diode Total Per diode Total Coupling 2.2 1.3 4.5 3.5 0.3 2.5 Unit C/W Min. Typ. Max. 100 Unit A mA V VR = VRRM 7 IF = 10 A IF = 20 A IF = 20 A 0.65 0.5 15 0.57 0.84 0.72 To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS) 2/8 STPS2045CT/CF/CG/CFP/CR Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 IF(av) (A) 5 6 7 8 9 =tp/T T Fig. 2: Average current versus temperature (=0.5, per diode). IF(av)(A) ambient = 0.1 = 0.05 = 0.2 12 = 0.5 Rth(j-a)=Rth(j-c) 10 =1 TO-220AB DPAK 8 6 4 2 =tp/T T Rth(j-a)=15C/W ISOWATT220AB TO-220FPAB tp tp Tamb(C) 50 75 100 125 150 175 10 11 12 0 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK and IPAK). IM(A) 140 120 100 80 60 40 20 0 1E-3 IM t Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB). IM(A) 100 80 60 Tc=75C Tc=100C Tc=75C 40 20 IM t Tc=100C Tc=125C Tc=125C =0.5 =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 t(s) 1E-2 1E-1 1E+0 3/8 STPS2045CT/CF/CG/CFP/CR Fig. 6-1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AB, D2PAK and IPAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.5 Fig. 6-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.2 = 0.1 Single pulse = 0.5 0.2 0.2 tp(s) 1E-3 1E-2 =tp/T tp = 0.2 = 0.1 Single pulse tp(s) =tp/T tp 0.0 1E-4 1E-1 1E+0 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 5E+4 1E+4 1E+3 1E+2 Tj=50C Tj=150C Tj=125C Tj=100C Tj=75C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 F=1MHz Tj=25C 500 1E+1 1E+0 Tj=25C 200 VR(V) 30 35 40 45 VR(V) 1E-1 0 5 10 15 20 25 100 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=125C Typical values Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m). Rth(j-a) (C/W) 80 70 60 50 40 30 20 10 0 10.0 Tj=125C Tj=25C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 S(Cu) (cm) 0 5 10 15 20 25 30 35 40 4/8 STPS2045CT/CF/CG/CFP/CR PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8 A A1 A2 D L L3 A1 B2 B G A2 C R B B2 C C2 D E G L L2 L3 M R V2 M * V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 5/8 STPS2045CT/CF/CG/CFP/CR PACKAGE MECHANICAL DATA TO-220AB REF. Min. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A DIMENSIONS Millimeters Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 16.4 typ. 0.645 typ. PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters A H B Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 6/8 STPS2045CT/CF/CG/CFP/CR PACKAGE MECHANICAL DATA IPAK REF. Min. A A1 b b1 D DIMENSIONS Millimeters Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 A E L2 c2 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 b2 c c2 D A1 L1 b2 L b1 b e e E L L1 c L2 PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 7/8 STPS2045CT/CF/CG/CFP/CR Type STPS2045CT STPS2045CF STPS2045CFP STPS2045CG STPS2045CG-TR STPS2045CR s Marking STPS2045CT STPS2045CF STPS2045CFP STPS2045CG STPS2045CG STPS2045CR Package TO-220AB ISOWATT220AB TO-220FPAB D2PAK D PAK IPAK 2 Weight 2.25 g. 2.08 g. 2.0 g 1.48 g. 1.48 g. 1.49 g. Base qty 50 50 50 50 1000 50 Delivery mode Tube Tube Tube Tube Tape & reel Tube s s s Cooling method: by conduction (C) Recommended torque value: 0.55 N.m. Maximum torque value: 0.7 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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